Universal quantized spin-Hall conductance fluctuation in graphene

Abstract

We report a theoretical investigation of quantized spin-Hall conductance fluctuation of graphene devices in the diffusive regime. Two graphene models that exhibit quantized spin-Hall effect (QSHE) are analyzed. Model-I is with unitary symmetry under an external magnetic field $B\ne 0$ but with zero spin-orbit interaction, $t_{SO}=0$. Model-II is with symplectic symmetry where B=0 but $t_{SO}\ne 0$. Extensive numerical calculations indicate that the two models have exactly the same universal QSHE conductance fluctuation value $0.285e/4\pi$ regardless of the symmetry. Qualitatively different from the conventional charge and spin universal conductance distributions, in the presence of edge states the spin-Hall conductance shows an one-sided log-normal distribution rather than a Gaussian distribution. Our results strongly suggest that the quantized spin-Hall conductance fluctuation belongs to a new universality class.

References in corpus (11)

• Quantum Spin Hall Effect in Graphene
• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Random-Matrix Theory of Quantum Transport
• Universal Intrinsic Spin-Hall Effect
• Dissipationless Quantum Spin Current at Room Temperature
• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Spin Filtered Edge States and Quantum Hall Effect in Graphene
• Dissipative Quantum Hall Effect in Graphene near the Dirac Point
• Nondissipative Spin Hall Effect via Quantized Edge Transport
• Universal spin-Hall conductance fluctuations in two dimensions
• Mesoscopic Spin Hall Effect

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• Electronic Highways in Bilayer Graphene
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• Weak momentum scattering and the conductivity of graphene
• Inverse quantum spin Hall effect generated by spin pumping from precessing magnetization into a graphene-based two-dimensional topological insulator
• Universal Spin Hall Conductance Fluctuations in Chaotic Dirac Quantum Dots
• Orbital Hall effect in mesoscopic devices
• Nonlinear Hall effect on a disordered lattice
• Spin-to-Charge Conversion in 2D Electron Gas and Single-layer Graphene Devices
• DMPK Equation for the Edge Transport of Quantum Spin Hall Insulator
• Magnetic field mediated conductance oscillation in graphene p-n junctions
• Spin Hall angle in single-layer graphene
• Substrate-limited helical edge states
• General method for calculating transport properties of disordered mesoscopic systems based on the nonequilibrium Green's function formalism
• Fermi energy sensitive universal conductance fluctuations in anisotropic materials
• Interplay of Rashba spin orbit coupling and disorder in the conductance properties of a four terminal junction device