Topological and topological-electronic correlations in amorphous silicon
arXiv:0710.0175 · doi:10.1016/j.jnoncrysol.2008.02.021
Abstract
In this paper, we study several structural models of amorphous silicon, and discuss structural and electronic features common to all. We note spatial correlations between short bonds, and similar correlations between long bonds. Such effects persist under a first principles relaxation of the system and at finite temperature. Next we explore the nature of the band tail states and find the states to possess a filamentary structure. We detail correlations between local geometry and the band tails.
7 pages, 11 figures, submitted to Journal of Crystalline Solids
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Cited by in corpus (7)
- Large and realistic models of Amorphous Silicon
- Hidden structure in amorphous solids
- Phonon driven transport in amorphous semiconductors: Transition probabilities
- A semi-quantitative scattering theory of amorphous materials
- Spatially Local Estimates of the Thermal Conductivity of Materials
- Approximate Theory of Temperature Coefficient of Resistivity of Amorphous Semiconductors
- Physical limits of ultra-high-finesse optical cavities: Taming two-level systems of glassy metal oxides