Screening of Coulomb Impurities in Graphene
arXiv:0708.4263 · doi:10.1103/PhysRevLett.100.076803
Abstract
We calculate exactly the vacuum polarization charge density in the field of a subcritical Coulomb impurity, , in graphene. Our analysis is based on the exact electron Green's function, obtained by using the operator method, and leads to results that are exact in the parameter , where is the "fine structure constant" of graphene. Taking into account also electron-electron interactions in the Hartree approximation, we solve the problem self-consistently in the subcritical regime, where the impurity has an effective charge , determined by the localized induced charge. We find that an impurity with bare charge Z=1 remains subcritical, , for any , while impurities with and higher can become supercritical at certain values of .
4 pages, 2 figures
References in corpus (7)
- Electric Field Effect in Atomically Thin Carbon Films
- Carrier transport in 2D graphene layers
- The Coulomb impurity problem in graphene
- Vacuum Polarization and Screening of Supercritical Impurities in Graphene
- Nonlinear screening of charge impurities in graphene
- Screening of a hypercritical charge in graphene
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- Supercritical Coulomb Impurities in Gapped Graphene
- Atomic collapse, Lorentz boosts, Klein scattering, and other quantum-relativistic phenomena in graphene
- Theory of charged impurity scattering in two dimensional graphene
- Polarization Charge Distribution in Gapped Graphene
- Electron-Electron Interactions in the Vacuum Polarization of Graphene
- Localized Collective Excitations in Doped Graphene in Strong Magnetic Fields
- Induced Current and Aharonov-Bohm Effect in Graphene