Nonlinear screening and ballistic transport in a graphene p-n junction

Abstract

We study the charge density distribution, the electric field profile, and the resistance of an electrostatically created lateral p-n junction in graphene. We show that the electric field at the interface of the electron and hole regions is strongly enhanced due to limited screening capacity of Dirac quasiparticles. Accordingly, the junction resistance is lower than estimated in previous literature.

4 pages, 2 figures. (v1) Original version (v2) Introduction largely rewritten, minor typos fixed throughout

References in corpus (5)

• Transport measurements across a tunable potential barrier in graphene
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
• Screening of a hypercritical charge in graphene
• Effect of disorder on a graphene p-n junction
• Reentrance effect in a graphene n-p-n junction coupled to a superconductor

Cited by in corpus (4)

• Klein Backscattering and Fabry-Perot Interference in Graphene Heterojunctions
• Conductance of p-n-p graphene structures with 'air-bridge' top gates
• Density-Functional Theory of Graphene Sheets
• Effect of disorder on a graphene p-n junction