Parity effect in Al and Nb single electron transistors in a tunable environment

Abstract

Two different types of Cooper pair transistors, with Al and Nb islands, have been investigated in a tunable electromagnetic environment. The device with an Al island demonstrates gate charge modulation with 2e-periodicity in a wide range of environmental impedances at bath temperatures below 340 mK. Contrary to the results of the Al sample, we were not able to detect 2e-periodicity under any conditions on similar samples with Nb island. We attribute this to the material properties of Nb.

3 pages, 3 figures

References in corpus (8)

• Nonequilibrium quasiparticles and $2e$ periodicity in single-Cooper-pair transistors
• Microsecond resolution of quasiparticle tunneling in the single-Cooper-pair-transistor
• Parity effect in superconducting aluminum single electron transistors with spatial gap profile controlled by film thickness
• A thermostable trilayer resist for niobium lift-off
• Circuit with small-capacitance high-quality Nb Josephson junctions
• Coulomb blockade of Cooper pair tunneling and parity effects in the Cooper pair transistor
• Single electron transistors with high quality superconducting niobium islands
• Single-electron transistors in electromagnetic environments

Cited by in corpus (6)

• 1 minute parity lifetime of a NbTiN Cooper-pair transistor
• Using materials for quasiparticle engineering
• Superconducting parity effect across the Anderson limit
• Quasiparticle poisoning and Josephson current fluctuations induced by Kondo impurities
• Periodicity in Al/Ti superconducting single electron transistors
• Method for finding the critical temperature of the island in a SET structure