Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy
arXiv:0707.0599 · doi:10.1063/1.2821413
Abstract
The excitonic recombinations in hexagonal boron nitride (hBN) are investigated with spatially resolved cathodoluminescence spectroscopy in the UV range. Cathodoluminescence images of an individual hBN crystallite reveals that the 215 nm free excitonic line is quite homogeneously emitted along the crystallite whereas the 220 nm and 227 nm excitonic emissions are located in specific regions of the crystallite. Transmission electron microscopy images show that these regions contain a high density of crystalline defects. This suggests that both the 220 nm and 227 nm emissions are produced by the recombination of excitons bound to structural defects.
References in corpus (1)
Cited by in corpus (6)
- Defect-related photoluminescence of hexagonal boron nitride
- Structural attributes and photo-dynamics of visible spectrum quantum emitters in hexagonal boron nitride
- Coupling of excitons and defect states in boron-nitride nanostructures
- Near band gap photoluminescence properties of hexagonal boron nitride
- Photoluminescence properties of pyrolytic boron nitride
- Exciton-exciton annihilation in hBN