Quantum-Hall activation gaps in graphene

Abstract

We have measured the quantum-Hall activation gaps in graphene at filling factors $\nu =2$ and $\nu =6$ for magnetic fields up to 32 T and temperatures from 4 K to 300 K. The $\nu =6$ gap can be described by thermal excitation to broadened Landau levels with a width of 400 K. In contrast, the gap measured at $\nu =2$ is strongly temperature and field dependent and approaches the expected value for sharp Landau levels for fields $B>20$ T and temperatures $T>100$ K. We explain this surprising behavior by a narrowing of the lowest Landau level.

4 pages, 4 figures, updated version after review, accepted for PRL

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Cited by in corpus (5)

• Theory of Anomalous Quantum Hall Effects in Graphene
• Zero-energy states in corrugated bilayer graphene
• Dynamics in the quantum Hall effect and the phase diagram of graphene
• Edge states, mass and spin gaps, and quantum Hall effect in graphene
• Toward theory of quantum Hall effect in graphene