Improving Intrinsic Decoherence in Multi-Quantum-Dot Charge Qubits
arXiv:0705.3923 · doi:10.1103/PhysRevB.76.235309
Abstract
We discuss decoherence in charge qubits formed by multiple lateral quantum dots in the framework of the spin-boson model and the Born-Markov approximation. We consider the intrinsic decoherence caused by the coupling to bulk phonon modes. Two distinct quantum dot configurations are studied: (i) Three quantum dots in a ring geometry with one excess electron in total and (ii) arrays of quantum dots where the computational basis states form multipole charge configurations. For the three-dot qubit, we demonstrate the possibility of performing one- and two-qubit operations by solely tuning gate voltages. Compared to the proposal by DiVincenzo {\it et al.} involving a linear three-dot spin qubit, the three-dot charge qubit allows for less overhead on two-qubit operations. For small interdot tunnel amplitudes, the three-dot qubits have factors much higher than those obtained for double dot systems. The high-multipole dot configurations also show a substantial decrease in decoherence at low operation frequencies when compared to the double-dot qubit.
11 pages, 6 figures, submitted to Phys. Rev. B
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