Slow relaxation of conductance of amorphous hopping insulators

Abstract

We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of structural defects. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.

6 pages, 1 figure

References in corpus (4)

• Symmetrical field effect and slow electron relaxation in granular aluminium
• A quench-cooling procedure compared with the gate-protocol for aging experiments in the Electron-Glass
• The Electron-Glass in samples approaching the Mesoscopic regime
• Statistics of Deep Energy States in Coulomb Glasses

Cited by in corpus (4)

• Manifestation of ageing in the low temperature conductance of disordered insulators
• Coexistence of anomalous field effect and mesoscopic conductance fluctuations in granular aluminium
• Electrical glassy behavior in granular aluminium thin films
• Anomalous thermal activation of the electron glass dynamics in a-InOx and granular aluminum