Slow relaxation of conductance of amorphous hopping insulators

Abstract

We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of structural defects. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.

arXiv comment6 pages, 1 figure

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Cited by in corpus (6)

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• Transition to exponential relaxation in weakly-disordered electron-glasses
• Electrical glassy behavior in granular aluminium thin films
• Quantum Memory Effects in Disordered Systems and Their Relation to 1/f Noise
• Anomalous thermal activation of the electron glass dynamics in a-InOx and granular aluminum