Spin Diode Based on Fe/MgO Double Tunnel Junction
arXiv:0705.2375 · doi:10.1021/nl072676z
Abstract
We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magneto-resistance is record high, ~4000%, essentially making the structure an on/off spin-switch. This, combined with the strong diode effect, ~100, offers a new device that should be promising for such technologies as magnetic random access memory and re-programmable logic.
14 pages
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Cited by in corpus (12)
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- Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles
- Dynamics of optical excitations in a Fe/MgO(001) heterostructure from time-dependent density functional theory
- Quantum size effects on spin-tunneling time in a magnetic resonant tunneling diode
- Interface-related magnetic and vibrational properties in Fe/MgO heterostructures from nuclear resonant spectroscopy and first-principles calculations
- Study of couplings effect on the performance of a spin-current diode: Nonequilibrium Green's function based model
- Diffusive model of current-in-plane-tunneling in double magnetic tunnel junctions
- Influence of spin-flip on the performance of the spin-diode
- Band-pass superlattice magnetic tunnel junctions