Magnetic Diode Effect in Double Barrier Tunnel Junctions

Abstract

A quantum statistical theory of spin-dependent tunneling through asymmetric magnetic double barrier junctions is presented which describes $both$ ballistic and diffuse tunneling by a single analytical expression. It is evidenced that the key parameter for the transition between these two tunneling regimes is the electron scattering. For these junctions a strong asymmetric behaviour in the I-V characteristics and the tunnel magnetoresistance (TMR) is predicted which can be controlled by an applied magnetic field. This phenomenon relates to the quantum well states in the middle metallic layer. The corresponding resonances in the current and the TMR are drastically phase shifted under positive and negative voltage.

10 pages, 4 Postscript figures, submitted to Europhys. Lett

Cited by in corpus (11)

• Electrically Tunable Spin Polarization in a Carbon-Nanotube Spin Diode
• Spin Diode Based on Fe/MgO Double Tunnel Junction
• Long range phase coherencein double barrier magnetic tunnel junctions with large thick metallic quantum well
• Resonant spin transfer torque nano-oscillators
• Controlling shot noise in double-barrier magnetic tunnel junctions
• Directional flow of solitons with asymmetric potential wells: Soliton diode
• Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles
• Impurity-induced tuning of quantum well states in spin-dependent resonant tunneling
• Diode Effect in Asymmetric Double Tunnel Barriers with Single Metal Nanoclusters
• Magnetic diode at $T$ = 300 K
• Diffusive model of current-in-plane-tunneling in double magnetic tunnel junctions