307 citations
- TU WienAT4 papers
- Ludwig-Maximilians-Universität MünchenDE2 papers
- Tomsk State University of Control Systems and Radio-ElectronicsRU2 papers
- Aarhus UniversityDK1 paper
- Ames Research CenterUS1 paper
- Carnegie Mellon UniversityUS1 paper
- Centre d'Économie de la SorbonneFR1 paper
- Chemnitz University of TechnologyDE1 paper
- Friedrich Schiller University JenaDE1 paper
- G.V. Kurdyumov Institute for Metal PhysicsUA1 paper
- Institute of Economic SciencesRS1 paper
- Institute of Photonic SciencesES1 paper
5 papers · 1 filter
A new unified approach for modeling hot rolling of steel Part 1: Comparison of models for recrystallization
Jan Orend, Felix Hagemann, Frank Klose +2
Models for the microstructure evolution during hot rolling are reviewed. The basic macroscopic phenomena related to recrystallization are summarized. Constitutive models based on s…
Unusual magnetism of layered chromium sulfides MCrS2 (M=Li, Na, K, Ag, and Au)
A. V. Ushakov, D. A. Kukusta, A. N. Yaresko +1
MCrS2 compounds (M=Li, Na, K, Cu, Ag, and Au) with triangular Cr layers show large variety of magnetic ground states ranging from 120-degree antiferromagnetic order of Cr spins in…
Ab-initio simulations on growth and interface properties of epitaxial oxides on silicon
Clemens J. Foerst, Christopher R. Ashman, Karlheinz Schwarz +1
The replacement of SiO2 by so-called high-k oxides is one of the major challenges for the semiconductor industry to date. Based on electronic structure calculations and ab-initio m…
The chemistry of La on the Si(001) surface
Christopher R. Ashman, Clemens J. Foerst, Karlheinz Schwarz +1
This paper reports state-of-the-art electronic structure calculations of La adsorption on the Si(001) surface. We predict La chains in the low coverage limit, which condense in a s…
The interface between silicon and a high-k oxide
Clemens J. Foerst, Christopher R. Ashman, Karlheinz Schwarz +1
The ability to follow Moore's Law has been the basis of the tremendous success of the semiconductor industry in the past decades. To date, the greatest challenge for device scaling…