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20022009
most citedGraphene Segregated on Ni surfaces and Transferred to Insulators

1.2k citations

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43 papers · 1 filter

cond-mat.mes-hall200917 cited

Magnetic-Field-Induced Crossover to a Nonuniversal Regime in a Kondo Dot

Tai-Min Liu, Bryan Hemingway, Steven Herbert +2

We have measured the magnetic splitting, , of a Kondo peak in the differential conductance of a Single-Electron Transistor while tuning the Kondo temperature, , along two…

cond-mat.mes-hall2009311 cited

Screening and interlayer coupling in multilayer graphene field-effect transistors

Yang Sui, Joerg Appenzeller

With the motivation of improving the performance and reliability of aggressively scaled nano-patterned graphene field-effect transistors, we present the first systematic experiment…

cond-mat.mes-hall200928 cited

Design space for low sensitivity to size variations in [110] PMOS nanowire devices: The implications of anisotropy in the quantization mass

Neophytos Neophytou, Gerhard Klimeck

A 20-band sp3d5s* spin-orbit-coupled, semi-empirical, atomistic tight-binding model is used with a semi-classical, ballistic, field-effect-transistor (FET) model, to examine the ON…

cond-mat.mes-hall20085 cited

Real space first-principles derived semiempirical pseudopotentials applied to tunneling magnetoresistance

K. H. Bevan, Tony Low, H. Guo

In this letter we present a real space density functional theory (DFT) localized basis set semi-empirical pseudopotential (SEP) approach. The method is applied to iron and magnesiu…

cond-mat.mes-hall2008133 cited

Conductance asymmetry of graphene pn junction

Tony Low, Seokmin Hong, Joerg Appenzeller +2

We use the non-equilibrium Green function (NEGF) method in the ballistic limit to provide a quantitative description of the conductance of graphene pn junctions - an important buil…

cond-mat.mes-hall200858 cited

Bandstructure Effects in Silicon Nanowire Hole Transport

Neophytos Neophytou, Abhijeet Paul, Gerhard Klimeck

Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin…