From the 1 of 6.1k papers with an AI index.
- RWTH Aachen UniversityDE1.1k papers
- Jülich Aachen Research AllianceDE848 papers
- University of BonnDE837 papers
- Centre National de la Recherche ScientifiqueFR515 papers
- Deutsches Elektronen-Synchrotron DESYDE371 papers
- University of WuppertalDE329 papers
- Universität HamburgDE293 papers
- Jagiellonian UniversityPL292 papers
- Institute of Nuclear Physics, Polish Academy of SciencesPL288 papers
- Istituto Nazionale di Fisica Nucleare, Sezione di TorinoIT277 papers
- Université Paris-SaclayFR275 papers
- Jülich Supercomputing CentreDE268 papers
36 papers · 2 filters
First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance
Marjana Lezaic, Phivos Mavropoulos, Stefan Blügel
We determine from first-principles the Curie temperature Tc for bulk Co in the hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bcc and bct Fe. For bcc-Co, Tc…
Domain structures and superdislocations of La0.7Ca0.3MnO3 thin films grown on SrTiO3 substrates
Yong Ding, Jiaqing He
The domain structures and dislocations in epitaxial thin films of La0.7Ca0.3MnO3 grown on SrTiO3 substrates by pulsed laser deposition were investigated using Bragg-contrast diffra…
Influence of mixing the low-valent transition metal atoms (Y,Y=Cr,Mn,Fe) on the properties of the quaternary Co[YY]Z (Z=Al,Ga,Si,Ge,Sn) Heusler compounds
K. Ozdogan, B. Aktas, I. Galanakis +1
We complement our study on the doping and disorder in CoMnZ compounds [I. Galanakis \textit{et al.}, Appl. Phys. Lett. \textbf{89}, 042502 (2006) and K. Özdogan \textit{et al.}…
Large inverse tunneling magnetoresistance in CoCrFeAl/MgO/CoFe magnetic tunnel junctions
A. D. Rata, H. Braak, D. E. Buergler +1
Magnetic tunnel junctions with the layer sequence CoCrFeAl/MgO/CoFe were fabricated by magnetron sputtering at room temperature (RT). The samples exhibit a larg…
GaN and InN nanowires grown by MBE: a comparison
Raffaella Calarco, Michel Marso
Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respe…
Quasiparticle Corrections to the Electronic Properties of Anion Vacancies at GaAs(110) and InP(110)
Magnus Hedström, Arno Schindlmayr, Günther Schwarz +1
We propose a new method for calculating optical defect levels and thermodynamic charge-transition levels of point defects in semiconductors, which includes quasiparticle correction…