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7 papers · 2 filters
All-wurtzite (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy
Aloyzas Siusys, Janusz Sadowski, Maciej Sawicki +6
Structural and magnetic properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires grown by molecular beam epitaxy on GaAs(111)B substrate with gold catalyst have been investigated.(In…
Enhanced sputtering and incorporation of Mn in implanted GaAs and ZnO nanowires
A. Johannes, S. Noack, W. Paschoal +8
We simulated and experimentally investigated the sputter yield of ZnO and GaAs nanowires, which were implanted with energetic Mn ions at room temperature. The resulting thinning of…
Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor
J. M. Riley, F. Mazzola, M. Dendzik +14
Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. Th…
Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As) epitaxial layers
K. Levchenko, T. Andrearczyk, J. Z. Domagala +3
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation i…
Thermoelectric performance of classical topological insulator nanowires
Johannes Gooth, Jan Goeran Gluschke, Robert Zierold +3
There is currently substantial effort being invested into creating efficient thermoelectric nanowires based on topological insulator chalcogenide-type materials. A key premise of t…
Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
Camilla Coletti, Stiven Forti, Alessandro Principi +10
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experi…