457 citations
- University of CambridgeGB45 papers
- University of NottinghamGB23 papers
- FZU ‒ Institute of Physics of the Academy of Sciences of the Czech RepublicCZ21 papers
- Hitachi (Japan)JP13 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR8 papers
- Laboratoire d'Électronique des Technologies de l'InformationFR8 papers
- Donostia International Physics CenterES7 papers
- Hitachi Global Storage Technologies (United States)US7 papers
- CEA GrenobleFR6 papers
- Texas A&M UniversityUS6 papers
- University of ExeterGB6 papers
- Chinese Academy of SciencesCN5 papers
4 papers · 1 filter
Single shot measurement of a silicon single electron transistor
D. G. Hasko, T. Ferrus, Q. R. Morrissey +8
We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temp…
Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions
A. D. Giddings, O. N. Makarovsky, M. N. Khalid +8
We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The…
Sub-ns spin-transfer switching: compared benefits of free layer biasing and pinned layer biasing
T. Devolder, C. Chappert, K. Ito
We analyze the statistical distribution of switching durations in spin-transfer switching induced by current steps, and discuss biasing strategies to enhance the reproducibility of…
Distribution of the magnetization reversal duration in sub-ns spin-transfer switching
T. Devolder, C. Chappert, J. A. Katine +2
We study the distribution of switching times in spin-transfer switching induced by sub-ns current pulses in pillar-shaped spin-valves. The pulse durations leading to switching foll…