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20032013
most citedSearch for Neutral MSSM Higgs Bosons at LEP

713 citations

Showing 2012Show all

7 papers · 1 filter

cond-mat.mes-hall20123 cited

Symmetry breaking for ratchet transport in presence of interactions and magnetic field

Leonardo Ermann, Alexei D. Chepelianskii, Dima L. Shepelyansky

We study the microwave induced ratchet transport of two-dimensional electrons on an oriented semidisk Galton board. The magnetic field symmetries of ratchet transport are analyzed…

cond-mat.mes-hall201247 cited

Particle Entanglement Spectra for Quantum Hall states on Lattices

A. Sterdyniak, N. Regnault, G. Moller

We use particle entanglement spectra to characterize bosonic quantum Hall states on lattices, motivated by recent studies of bosonic atoms on optical lattices. Unlike for the relat…

cond-mat.supr-con201288 cited

Anomalous Upper Critical Field in CeCoIn_5/YbCoIn_5 Superlattices with a Rashba-type Heavy Fermion Interface

S. K. Goh, Y. Mizukami, H. Shishido +9

We report a highly unusual angular variation of the upper critical field (H_c2) in epitaxial superlattices CeCoIn_5(n)/YbCoIn_5(5), formed by alternating layers of n and a 5 unit-c…

cond-mat.str-el201236 cited

Importance of many body effects in the kernel of hemoglobin for ligand binding

Cedric Weber, David D. O'Regan, Nicholas D. M. Hine +3

We propose a mechanism for binding of diatomic ligands to heme based on a dynamical orbital selection process. This scenario may be described as bonding determined by local valence…

cs.IR201210 cited

PageRank of integers

K. M. Frahm, A. D. Chepelianskii, D. L. Shepelyansky

We build up a directed network tracing links from a given integer to its divisors and analyze the properties of the Google matrix of this network. The PageRank vector of this matri…

cond-mat.mes-hall201240 cited

Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

J. C. H. Chen, D. Q. Wang, O. Klochan +7

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bia…