274 citations
- University of TriesteIT68 papers
- AREA Science ParkIT42 papers
- Centre National de la Recherche ScientifiqueFR30 papers
- Deutsches Elektronen-Synchrotron DESYDE30 papers
- Aarhus UniversityDK26 papers
- Istituto Officina dei MaterialiIT26 papers
- Sapienza University of RomeIT25 papers
- Institute of Structure of MatterIT23 papers
- Universität HamburgDE20 papers
- European X-Ray Free-Electron LaserDE19 papers
- Paul Scherrer InstituteCH17 papers
- Politecnico di MilanoIT17 papers
27 papers · 1 filter
Relaxation pathways and emergence of domains in square artificial spin ice
Matteo Menniti, Naëmi Leo, Pedro Villalba-González +2
Multi-domain states of square artificial spin ice show a range of different morphologies ranging from simple stripe-like domains to more organically shaped coral domains. To model…
Van der Waals devices for surface-sensitive experiments
Nicolai Taufertshöfer, Corinna Burri, Rok Venturini +11
In-operando characterization of van der Waals (vdW) devices using surface-sensitive methods provides critical insights into phase transitions and correlated electronic states. Yet,…
Tracking the photoinduced dynamics of a dark excitonic state in single-layer WS via resonant Autler-Townes splitting
Angela Montanaro, Francesco Valiera, Francesca Giusti +10
Excitons in a monolayer transition metal dichalcogenide (1L-TMD) are highly bound states characterized by a Rydberg-like spectrum of discrete energy levels. Among these, states wit…
Evidence of directional structural superlubricity and Lévy flights in a van der Waals heterostructure
Maxime Le Ster, Paweł Krukowski, Maciej Rogala +11
Structural superlubricity is a special frictionless contact in which two crystals are in incommensurate arrangement such that relative in-plane translation is associated with vanis…
In-Plane Anisotropy-Driven Directional Charge Transport in van der Waals p-n Heterojunction
Rahul Paramanik, Tanima Kundu, Soumik Das +8
Low-symmetry two-dimensional (2D) van der Waals (vdW) materials enable anisotropic charge transport, crucial for polarization-sensitive optoelectronics. In this study, a -GeS/$n…
Spin-dependent gap in graphene on a magnetic substrate
P. M. Sheverdyaeva, G. Bihlmayer, E. Cappelluti +12
We present a detailed analysis of the electronic properties of graphene/Eu/Ni(111). By using angle and spin-resolved photoemission spectroscopy and ab initio calculations, we show…