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- Aalto UniversityFI160 papers
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5 papers · 1 filter
RSFQ devices with selective dissipation for quantum information processing
J. Hassel, H. Seppa, P. Helisto
We study the possibility to use frequency dependent damping in RSFQ circuits as means to reduce dissipation and consequent decoherence in RSFQ/qubit circuits. We show that stable R…
Two sub-band conductivity of Si quantum well
Mika Prunnila, Jouni Ahopelto
We report on two sub-band transport in double gate SiO-Si-SiO quantum well with 14 nm thick Si layer at 270 mK. At symmetric well potential the experimental sub-band spacin…
Electron Mobility and Magneto Transport Study of Ultra-Thin Channel Double-Gate Si MOSFETs
M. Prunnila, J. Ahopelto, F. Gamiz
We report on detailed room temperature and low temperature transport properties of double-gate Si MOSFETs with the Si well thickness in the range 7-17 nm. The devices were fabricat…
Intervalley-Scattering Induced Electron-Phonon Energy Relaxation in Many-Valley Semiconductors at Low Temperatures
M. Prunnila, P. Kivinen, A. Savin +2
We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for th…
Shot-noise-driven escape in hysteretic Josephson junctions
J. P. Pekola, T. E. Nieminen, M. Meschke +3
We have measured the influence of shot noise on hysteretic Josephson junctions initially in macroscopic quantum tunnelling (MQT) regime. Escape threshold current into the resistive…