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20242026
most citedExploring the Design and Measurements of Next-Generation 4H-SiC LGADs

6 citations

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Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

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physics.ins-det2026

Effects of irradiation by protons, neutrons, and gamma particles on electrical properties of 4H-SiC diodes and LGAD sensors

Jiří Kroll, Pavla Federičová, Jan Chochol +15

4H-SiC is a wide-bandgap semiconductor with high displacement threshold energy, large critical electric field, and low intrinsic carrier concentration, making it attractive for rad…

physics.ins-det2025★ 6 cited

Exploring the Design and Measurements of Next-Generation 4H-SiC LGADs

Peter Švihra, Jan Chochol, Vladimír Kafka +13

This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics s…