3 papers
physics.ins-det2026
Effects of irradiation by protons, neutrons, and gamma particles on electrical properties of 4H-SiC diodes and LGAD sensors
Jiří Kroll, Pavla Federičová, Jan Chochol +15
4H-SiC is a wide-bandgap semiconductor with high displacement threshold energy, large critical electric field, and low intrinsic carrier concentration, making it attractive for rad…
physics.ins-det2025
Exploring the Design and Measurements of Next-Generation 4H-SiC LGADs
Peter Švihra, Jan Chochol, Vladimír Kafka +13
This contribution presents the design, production, and initial testing of newly developed 4H-SiC Low Gain Avalanche Detectors (LGADs). The evaluation includes performance metrics s…
physics.ins-det2025
First generation 4H-SiC LGAD production and its performance evaluation
Radek Novotný, Jan Chochol, Vladimír Kafka +11
This contribution will delve into the design and performance of the newly produced Silicon Carbide Low Gain Avalanche Detectors (4H-SiC LGADs) and provide a comprehensive summary o…