Eastern Institute of Technology, Ningbo

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20212026

most citedElectron-induced non-monotonic pressure dependence of the lattice thermal conductivity of θ-TaN

33 citations

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Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.

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8 papers · 1 filter

cond-mat.mtrl-sci2026

Theory-Guided Discovery of Pressure-Induced Transitions in Fast-Ion Conductor BaSnF4

Robin Turnbull, Zhang YingLong, Claudio Cazorla +6

Fast-ion conductors such as BaSnF4 are of significant interest for next-generation solid-state battery technologies due to their high ionic conductivity and chemical stability. How…

cond-mat.mtrl-sci2025★ 4 cited

Defect Engineering for Stabilizing Magnetic and Topological Properties in Mn(Bi1-xSbx)2Te4

Haonan Chen, Jiayu Wang, Huayao Li +18

MnBi2Te4 is a versatile platform for exploring diverse topological quantum states, yet its potential is hampered by intrinsic antisite defects. While Sb substitution has been emplo…

cond-mat.mtrl-sci2025

Effect of Concentration Fluctuations on Material Properties of Disordered Alloys

Han-Pu Liang, Chuan-Nan Li, Xin-Ru Tang +4

Alloying compound AX with another compound BX is widely used to tune material properties. For disordered alloys, due to the lack of periodicity, it has been challenging to calculat…

cond-mat.mtrl-sci2025★ 21 cited

Emergent Multiferroic Altermagnets and Spin Control via Noncollinear Molecular Polarization

Ziye Zhu, Yuntian Liu, Xunkai Duan +5

Altermagnets, with spin splitting and vanishing magnetization, have been attributed to many fascinating phenomena and potential applications. In particular, integrating ferroelectr…

cond-mat.mtrl-sci2024★ 20 cited

Is p-type doping in TeO2 feasible?

Zewen Xiao, Chen Qiu, Su-Huai Wei +1

Wide-bandgap two-dimensional (2D) beta-TeO2 has been reported as a high-mobility p-type transparent semiconductor (Nat. Electron. 2021, 4, 277-283), attracting significant attentio…

cond-mat.mtrl-sci2024★ 7 cited

Mechanism of $E_{γ}^{'}$ Defect Generation in Ionizing-irradiated $a$ -SiO $_{2}$ : The Nonradiative Carrier Capture-Structural Relaxation Model

Yu Song, Chen Qiu, Su-Huai Wei

The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced $E_{γ}^{'}$ defects in the $a$ -SiO $_{2}$ dielectrics, but the conventional ``hole transport-trap…

cond-mat.mtrl-sci2023★ 33 cited

Electron-induced non-monotonic pressure dependence of the lattice thermal conductivity of θ-TaN

Ashis Kundu, Yani Chen, Xiaolong Yang +5

Recent theoretical and experimental research suggests that $θ$ -TaN is a semimetal with high thermal conductivity ( $κ$ ), primarily due to the contribution of phonons ($κ_\texttt{ph}…

cond-mat.mtrl-sci2022★ 3 cited

Single-dislocation phonons: atomic-scale measurement and their thermal properties

Yuehui Li, Bo Han, Xiaolong Yang +12

Nanoscale defects such as dislocations, have a significant impact on the phonon thermal transport properties in non-metallic materials. To unravel these effects, understanding of d…