183 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- University at Buffalo, State University of New YorkUS5 papers
- Zhejiang UniversityCN5 papers
- Eastern Institute of Technology, Ningbo4 papers
- Fuzhou UniversityCN3 papers
- Shanghai Jiao Tong UniversityCN3 papers
- Suzhou University of Science and TechnologyCN3 papers
- University of Science and Technology of ChinaCN3 papers
- Chinese Academy of SciencesCN2 papers
- Harvard University PressUS2 papers
- New York UniversityUS2 papers
- Princeton UniversityUS2 papers
- Rutgers, The State University of New JerseyUS2 papers
8 papers · 1 filter
Theory-Guided Discovery of Pressure-Induced Transitions in Fast-Ion Conductor BaSnF4
Robin Turnbull, Zhang YingLong, Claudio Cazorla +6
Fast-ion conductors such as BaSnF4 are of significant interest for next-generation solid-state battery technologies due to their high ionic conductivity and chemical stability. How…
Many-body description of two-dimensional van der Waals ferroelectric InSe
Denzel Ayala, Dimitar Pashov, Tong Zhou +3
Two-dimensional (2D) van der Waals ferroelectrics are recognized for enabling many applications, from memory and logic to neuromorphic computing, as well as transforming other mate…
Interface-Enhanced Superconductivity in Ultrathin TiN Proximitized by Topological Insulators
Renjie Xie, Bowen Hao, Min Ge +11
High-quality topological insulator-superconductor (TI-SC) heterostructure with an atomically sharp and well-controlled interface is crucial for realizing topological superconductiv…
Altermagnetic Proximity Effect
Ziye Zhu, Richang Huang, Xianzhang Chen +5
Proximity effects not only complement the conventional methods of designing materials, but also enable realizing properties that are not present in any constituent region of the co…
Two-Dimensional Ferroelectric Altermagnets: From Model to Material Realization
Ziye Zhu, Xunkai Duan, Jiayong Zhang +3
Multiferroic altermagnets offer new opportunities for magnetoelectric coupling and electrically tunable spintronics. However, due to intrinsic symmetry conflicts between altermagne…
Unraveling structural, electronic, and magnetic ambiguities in Pb1-δCrO3 with an insulating charge-transfer band structure
Jian Chen, Guozhu Song, Han Ge +4
As a recently-identified Mott system, PbCrO3 remains largely unexplored, especially for its band structure, leading to many contentious issues on its structural, electronic, and ma…
Mechanism of Defect Generation in Ionizing-irradiated -SiO: The Nonradiative Carrier Capture-Structural Relaxation Model
Yu Song, Chen Qiu, Su-Huai Wei
The total ionizing dose (TID) effect of semiconductor devices stems from radiation-induced defects in the -SiO dielectrics, but the conventional ``hole transport-trap…
Antiferroelectric Altermagnets: Antiferroelectricity Alters Magnets
Xunkai Duan, Jiayong Zhang, Ziye Zhu +4
Magnetoelectric coupling is crucial for uncovering fundamental phenomena and advancing technologies in high-density data storage and energy-efficient devices. The emergence of alte…