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- Max Planck Institute for Mathematics in the SciencesDE139 papers
- Deutsches Elektronen-Synchrotron DESYDE122 papers
- University of RegensburgDE105 papers
- University of EdinburghGB81 papers
- University of LiverpoolGB78 papers
- Centre National de la Recherche ScientifiqueFR76 papers
- Humboldt-Universität zu BerlinDE72 papers
- Joint Institute for Nuclear ResearchRU56 papers
- Forschungszentrum JülichDE54 papers
- Center for Scalable Data Analytics and Artificial IntelligenceDE50 papers
- University of CopenhagenDK44 papers
- John von Neumann Institute for ComputingDE42 papers
117 papers · 1 filter
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…
Lifetime-Limited and Tunable Emission from Charge-Stabilized Nickel Vacancy Centers in Diamond
I. M. Morris, T. Lühmann, K. Klink +7
The negatively charged nickel vacancy center (NiV) in diamond is a promising spin qubit candidate with predicted inversion symmetry, large ground state spin orbit splitting to…
Towards Arbitrary QUBO Optimization: Analysis of Classical and Quantum-Activated Feedforward Neural Networks
Chia-Tso Lai, Carsten Blank, Peter Schmelcher +1
Quadratic Unconstrained Binary Optimization (QUBO) sits at the heart of many industries and academic fields such as logistics, supply chain, finance, pharmaceutical science, chemis…
Classical periodic trajectories and quantum scars in many-spin systems
Igor Ermakov, Oleg Lychkovskiy, Boris V. Fine
We numerically investigate the stability of exceptional periodic classical trajectories in rather generic chaotic many-body systems and explore a possible connection between these…
Hopping of the center-of-mass of single G centers in silicon-on-insulator
Alrik Durand, Yoann Baron, Péter Udvarhelyi +15
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metasta…
Genuine and faux single G centers in carbon-implanted silicon
Alrik Durand, Yoann Baron, Félix Cache +12
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around m and identified…