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defect clustering 1dopant activation 1ion implantation 1molecular dynamics 1silicon carbide 1

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cond-mat.mtrl-sci2026

The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers

Sabine Leroch, Robert Stella, Andreas Hössinger +1

The paper uses molecular dynamics simulations with a DFT‑fitted Al–SiC potential to study how implantation temperature and dose affect aluminum dopant activation and defect formati…