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- University of Chinese Academy of SciencesCN90 papers
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- Institute of High Energy PhysicsCN71 papers
- University of South ChinaCN70 papers
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14 papers · 1 filter
Ferroelectrically tunable topological phase transition in InSe thin films
Zhiqiang Tian, Ziming Zhu, Jiang Zeng +4
Materials with ferroelectrically switchable topological properties are of interest for both fundamental physics and practical applications. Using first-principles calculations, we…
Doping induced multiferroicity and quantum anomalous Hall effect in -InSe thin films
Zhiqiang Tian, Jin-Yang Li, Tao Ouyang +5
In flat-band materials, the strong Coulomb interaction between electrons can lead to exotic physical phenomena. Recently, -InSe thin films were found to possess ferroele…
Chiral topological metals with multiple types of quasiparticle fermions and large spin Hall effect in the SrGePt family materials
Yi Shen, Yahui Jin, Yongheng Ge +2
We present a prediction of chiral topological metals with several classes of unconventional quasiparticle fermions in a family of SrGePt-type materials in terms of first-principles…
Two-dimensional hourglass Weyl nodal loop in monolayer Pb(ClO) and Sr(ClO)
Xin-Yue Kang, Chunmei Zhang, Mingxing Chen +1
The hourglass fermions in solid-state materials have been attracting significant interest recently. However, realistic two-dimensional (2D) materials with hourglass-shaped band str…
Multiferroic van der Waals heterostructure FeCl/ScCO: Nonvolatile electrically switchable electronic and spintronic properties
Liemao Cao, Xiaohui Deng, Guanghui Zhou +4
Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and t…
First-principles study on the solute-induced low diffusion and self-trapping of helium in fcc iron
Kui Rao, Jingxin Hu, Gang Ouyang +3
The addition of alloying elements plays an essential role in helium (He) behaviours produced by transmutation in metal alloys. Effects of solutes (Ni, Cr, Ti, P, Si, C) on the beha…