most citedA Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode with a Spherically Uniform Electric Field Peak

31 citations

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physics.ins-det2022★ 27 cited

A Backside-Illuminated Charge-Focusing Silicon SPAD with Enhanced Near-Infrared Sensitivity

Edward Van Sieleghem, Gauri Karve, Koen De Munck +5

A backside-illuminated (BSI) near-infrared enhanced silicon single-photon avalanche diode (SPAD) for time-of-flight (ToF) light detection and ranging applications is presented. The…

physics.ins-det2021★ 31 cited

A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode with a Spherically Uniform Electric Field Peak

Edward Van Sieleghem, Andreas Süss, Pierre Boulenc +5

A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized 0.13 m CMOS technology is presented. The SPAD has a depleted absorption vo…