collaborators

1 paper

physics.ins-det2021

A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode with a Spherically Uniform Electric Field Peak

Edward Van Sieleghem, Andreas Süss, Pierre Boulenc +5

A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized 0.13 m CMOS technology is presented. The SPAD has a depleted absorption vo…