40 citations
- Institut de recherche mathématique de RennesFR2 papers
- Institut FresnelFR2 papers
- Academia SinicaTW1 paper
- Burke FoundationUS1 paper
- Centre National de la Recherche ScientifiqueFR1 paper
- Institut de Recherche sur les Composants logiciels et matériels pour l'Information et la Communication AvancéeFR1 paper
- Institute of Atomic and Molecular Sciences, Academia SinicaTW1 paper
- Institute of Physics, Academia SinicaTW1 paper
- Institute of Political Science, Academia SinicaTW1 paper
- Instituto de Física TeóricaES1 paper
- International Centre for Theoretical Physics Asia-PacificCN1 paper
- Laboratoire d'Analyse et d'Architecture des SystèmesFR1 paper
5 papers
Investigation of intrinsic properties of high-quality fiber Fabry--Perot resonators
Germain Bourcier, Stephane Balac, Safia Mohand-Ousaid +8
Fiber Fabry--Perot (FFP) resonators of a few centimeters are optimized as a function of the reflectivity of the mirrors and the dimensions of the intra-cavity waveguide. Loaded qua…
Laser self-injection locking to fiber Fabry-Perot resonator for frequency comb generation
Germain Bourcier, Stephane Balac, Julien Lumeau +7
This study demonstrates that self-injection locking (SIL) of a distributed feedback (DFB) laser to a high-Q fiber Fabry Perot (FFP) resonator, fabricated with highly nonlinear fibe…
Regularized Contrastive Partial Multi-view Outlier Detection
Yijia Wang, Qianqian Xu, Yangbangyan Jiang +2
In recent years, multi-view outlier detection (MVOD) methods have advanced significantly, aiming to identify outliers within multi-view datasets. A key point is to better detect cl…
Branes, quivers and wave-functions
Taro Kimura, Miłosz Panfil, Yuji Sugimoto +1
We consider a large class of branes in toric strip geometries, both non-periodic and periodic ones. For a fixed background geometry we show that partition functions for such branes…
Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe Tunnel Field-Effect Transistors
Gaurav Pande, Jyun-Yan Siao, Wei-Liang Chen +7
To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are…