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- C. Touramanis2 profiles45 · h 67
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4 papers · 1 filter
Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing Ballistic Electron Emission Microscopy
Chris A. Durcan, Robert Balsano, Vincent P. LaBella
The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using BEEM over a period of 21 days to observe changes in the interface electrostatics. Initially the averag…
Ideal Graphene/Silicon Schottky Junction Diodes
Dhiraj Sinha, Ji Ung Lee
The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky…
Scaling Analysis of Nanowire Phase Change Memory
Jie Liu, Bin Yu, M. P. Anantram
This letter analyzes the scaling property of nanowire (NW) phase change memory (PCM) using analytic and numerical methods. The scaling scenarios of the three widely-used NW PCM per…
Molecular Electronics: From Physics to Computing
Yongqiang Xue, Mark A. Ratner
Even if Moore's Law continues to hold, it will take about 250 years to fill the performance gap between present-day computer and the ultimate computer determined from the laws of p…