176 citations
- Technische Universität DresdenDE127 papers
- University of WürzburgDE106 papers
- Leibniz Institute for Solid State and Materials ResearchDE79 papers
- Helmholtz-Zentrum Dresden-RossendorfDE35 papers
- Centre National de la Recherche ScientifiqueFR20 papers
- Max Planck Institute for Chemical Physics of SolidsDE19 papers
- Max Planck Institute for the Physics of Complex SystemsDE16 papers
- Max Planck Institute for Solid State ResearchDE10 papers
- The University of TokyoJP10 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR9 papers
- Diamond Light SourceGB9 papers
- Helmholtz-Zentrum Berlin für Materialien und EnergieDE9 papers
4 papers · 1 filter
Gate-controlled analog memcapacitance in LaAlO3/SrTiO3 interface-based devices
Soumen Pradhan, Victor Lopez-Richard, Igor Ricardo Filgueira e Silva +8
Current memcapacitor implementations typically demand complex fabrication processes or depend on organic materials exhibiting poor environmental stability and reproducibility. Here…
Electrical Control of Excitons in Bare-MoSe2 and MoSe2/NbSe2 Heterostructure
Atanu Patra, Vishakha Kaushik, Ali Sepas +10
Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, owing to their strong excitonic responses and atomic thicknes…
Demonstration of domain wall current in MgO-doped lithium niobate single crystals up to 400 °C
Hendrik Wulfmeier, Uliana Yakhnevych, Cornelius Boekhoff +12
Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and device sensors to be operational at elevated t…
Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions
Shruti Subramanian, Quinn T. Campbell, Simon Moser +18
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interfa…