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- Lawrence Berkeley National LaboratoryUS185 papers
- University of California, BerkeleyUS86 papers
- Kavli Energy NanoScience InstituteUS35 papers
- Advanced Light Source12 papers
- Centre National de la Recherche ScientifiqueFR9 papers
- Columbia UniversityUS8 papers
- Weizmann Institute of ScienceIL8 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR6 papers
- Foundry (United Kingdom)GB6 papers
- National Institute for Materials ScienceJP6 papers
- Technical University of MunichDE6 papers
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6 papers · 2 filters
Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist
M. Iqbal Bakti Utama, Roland J. Koch, Kyunghoon Lee +15
Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bi…
Electrically driven photon emission from individual atomic defects in monolayer WS2
Bruno Schuler, Katherine A. Cochrane, Christoph Kastl +7
Optical quantum emitters are a key component of quantum devices for metrology and information processing. In particular, atomic defects in 2D materials can operate as optical quant…
Tunable Electronic Structure in Gallium Chalcogenide van der Waals Compounds
Brian Shevitski, Søren Ulstrup, Roland J. Koch +8
Transition metal monochalcogenides comprise a class of two-dimensional materials with electronic band gaps that are highly sensitive to material thickness and chemical composition.…
Resonant and Bound States of Charged Defects in Two-Dimensional Semiconductors
Martik Aghajanian, Bruno Schuler, Katherine A. Cochrane +6
A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged accep…
Rigid band shifts in two-dimensional semiconductors through environmental screening
Lutz Waldecker, Archana Raja, Malte Rösner +9
We investigate the effects of environmental dielectric screening on the electronic dispersion and the band gap in the atomically-thin, quasi two-dimensional (2D) semiconductor WS$_…
Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride
Brian Shevitski, S. Matt Gilbert, Christopher T. Chen +8
Light emitters in wide band gap semiconductors are of great fundamental interest and have potential as optically addressable qubits. Here we describe the discovery of a new color c…