1.3k citations
- Universidad Autónoma de MadridES24 papers
- Université de Bretagne SudFR21 papers
- Max Planck Institute for Gravitational PhysicsDE19 papers
- University of Wisconsin–MilwaukeeUS15 papers
- Centre National de la Recherche ScientifiqueFR14 papers
- Pennsylvania State UniversityUS14 papers
- Tsinghua UniversityCN14 papers
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Showing 2003 · cond-mat.mtrl-sciShow all
3 papers · 2 filters
cond-mat.mtrl-sci2003★ 17 cited
Low temperature silicon epitaxy on hydrogen terminated Si(100) surfaces
Jeong-Young Ji, T. -C. Shen
Si deposition on H terminated Si(100)-2x1 and 3x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion an…
cond-mat.mtrl-sci2003★ 4 cited
The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)
J. C. Kim, J. -Y. Ji, J. S. Kline +2
The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scann…
cond-mat.mtrl-sci2003★ 20 cited
Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing
J. C. Kim, J. -Y. Ji, J. S. Kline +2
Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum…