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Faraday Technology (United States)

United States

2 papers here80 citations across 2
fields
  • cond-mat.mes-hall1
  • cond-mat.mtrl-sci1
ROR 03a654521OpenAlex

affiliations via OpenAlex

most citedGate Tunable Photovoltaic Effect in MoS2 vertical P-N Homostructures

65 citations

researchers with a paper here
  • A. Castellanos-Gómez1 · h 69
  • A. Molina‐Mendoza1 · h 18
  • A. Pakhare1 · h 4
  • C. Reuter1 · h 9
  • D. D. de Lara1 · h 16
  • D. Lin1 · h 18
  • E. Antolín1 · h 34
  • E. Detsi1 · h 27
  • Huixin He1 · h 9
  • Manuel Muñoz1 · h 4
  • M. R. Khoshi1 · h 7
  • N. Agraït1 · h 43
collaborating institutions
  • Centro Nacional de MicroelectrónicaES1 paper
  • European Telecommunications Standards InstituteFR1 paper
  • IMDEA Energy InstituteES1 paper
  • Madrid Institute for Advanced StudiesES1 paper
  • Michigan State UniversityUS1 paper
  • National Changhua University of EducationTW1 paper
  • New Jersey Institute of TechnologyUS1 paper
  • Rutgers, The State University of New JerseyUS1 paper
  • Technische Universität IlmenauDE1 paper
  • Universidad Autónoma de MadridES1 paper
  • Universidad Politécnica de MadridES1 paper
  • University of PennsylvaniaUS1 paper
Showing cond-mat.mes-hallShow all

1 paper · 1 filter

cond-mat.mes-hall2017★ 65 cited

Gate Tunable Photovoltaic Effect in MoS2 vertical P-N Homostructures

Simon A. Svatek, Elisa Antolin, Der-Yuh Lin +8

P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDC…

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