351 citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Zhejiang UniversityCN124 papers
- Fudan UniversityCN73 papers
- Tsinghua UniversityCN46 papers
- Chinese Academy of SciencesCN45 papers
- University of Chinese Academy of SciencesCN39 papers
- Nanjing UniversityCN31 papers
- Peking UniversityCN26 papers
- University of Science and Technology of ChinaCN26 papers
- Vladimir State UniversityRU26 papers
- St Petersburg UniversityRU25 papers
- Collaborative Innovation Center of Advanced MicrostructuresCN24 papers
- Beihang UniversityCN21 papers
13 papers · 2 filters
Highly Polarizable Semiconductors and Universal Origin of Ferroelectricity in Materials with a Litharge-Type Structural Unit
Ziye Zhu, Jiaming Hu, Yubo Yuan +3
We discover that a large family of [PbF]- and [BiO]-based mixed-anion materials with a litharge-type structural unit are highly polarizable layered semiconductors o…
Weak antilocalization in the transition metal telluride TaPdTe
Wen-He Jiao, Hang-Qiang Qiu, Wuzhang Yang +8
We report transport studies on the layered van der Waals topological crystalline insulator TaPdTe. The temperature-dependent resistance at high temperature is dominated…
Inter-Cation Charge Transfer Mediated Antiferromagnetism in CoIrS
Liang-Wen Ji, Si-Qi Wu, Bai-Zhuo Li +6
The antiferromagnetism in transition metal compounds is mostly mediated by the bridging anions through a so-called superexchange mechanism. However, in materials like normal spinel…
Absence of itinerant ferromagnetism in a cobalt-based oxypnictide
Hua-Xun Li, Hao Jiang, Yi-Qiang Lin +5
We report a layered transition-metal-ordered oxypnictide SrCrCoAsO. The new material was synthesized by solid-state reactions under vacuum. It has an intergrowth struct…
A DFT++ study of pristine and oxygen-deficient HfO with self-consistent Hubbard parameters
Yudi Yang, Wooil Yang, Young-Woo Son +1
HfO-based ferroelectrics have emerged as promising materials for advanced nanoelectronics, with their robust polarization and silicon compatibility making them ideal for high-d…
Topological phase transitions in perovskite superlattices driven by temperature, electric field, and doping
Jiyuan Yang, Shi Liu
Many dipolar topological structures have been experimentally demonstrated in (PbTiO)/(SrTiO) superlattices, such as flux-closure, vortice, and skyrmion. In this wor…
Origin of Interstitial Doping Induced Coercive Field Reduction in Ferroelectric Hafnia
Tianyuan Zhu, Liyang Ma, Xu Duan +1
Hafnia-based ferroelectrics hold promise for nonvolatile ferroelectric memory devices. However, the high coercive field required for polarization switching remains a prime obstacle…
Progress in Computational Understanding of Ferroelectric Mechanisms in HfO
Tianyuan Zhu, Liyang Ma, Shiqing Deng +1
Since the first report of ferroelectricity in nanoscale HfO-based thin films in 2011, this silicon-compatible binary oxide has quickly garnered intense interest in academia and…
Manipulating magnetism and transport properties of EuCdP with a low carrier concentration
Xiyu Chen, Ziwen Wang, Zhiyu Zhou +8
Materials that exhibit strongly coupled magnetic order and electronic properties are crucial for both fundamental research and technological applications. However, finding a materi…
Carrier-induced transition from antiferromagnetic insulator to ferromagnetic metal in the layered phosphide EuZnP
Xiyu Chen, Wuzhang Yang, Jia-Yi Lu +5
EuZnP was reported to be an insulating antiferromagnet with of 23.5 K. In this study, single crystals of EuZnP exhibiting metallic behavior and a fer…
Engineering band structures of two-dimensional materials with remote moire ferroelectricity
Jing Ding, Hanxiao Xiang, Wenqiang Zhou +7
The stacking order and twist angle provide abundant opportunities for engineering band structures of two-dimensional materials, including the formation of moire bands, flat bands,…
Theoretical lower limit of coercive field in ferroelectric hafnia
Jiyuan Yang, Jing Wu, Jingxuan Li +4
The high coercive field () of hafnia-based ferroelectrics presents a major obstacle to their applications. The ferroelectric switching mechanisms in hafnia that dictate ,…
Giant piezoelectric effects of topological structures in stretched ferroelectric membranes
Yihao Hu, Jiyuan Yang, Shi Liu
Freestanding ferroelectric oxide membranes emerge as a promising platform for exploring the interplay between topological polar ordering and dipolar interactions that are continuou…