7.2k citations
- University of Tennessee at KnoxvilleUS653 papers
- Los Alamos National LaboratoryUS163 papers
- Quantum Science CenterUS162 papers
- Centre National de la Recherche ScientifiqueFR157 papers
- Argonne National LaboratoryUS130 papers
- Lawrence Berkeley National LaboratoryUS119 papers
- Brookhaven National LaboratoryUS115 papers
- University of Illinois Urbana-ChampaignUS115 papers
- Lawrence Livermore National LaboratoryUS110 papers
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR105 papers
- The University of TokyoJP98 papers
- National Institute of Standards and TechnologyUS89 papers
95 papers · 1 filter
Itinerant Antiferromagnetism in RuO
T. Berlijn, P. C. Snijders, O. Delaire +9
Bulk rutile RuO has long been considered a Pauli paramagnet. Here we report that RuO exhibits a hitherto undetected lattice distortion below approximately 900 K. The distor…
Reinventing atomistic magnetic simulations with spin-orbit coupling
Dilina Perera, Markus Eisenbach, Don M. Nicholson +2
We propose a powerful extension to combined molecular and spin dynamics that fully captures the coupling between the atomic and spin subsystems via spin-orbit interactions. Its fou…
Identifying the minor set cover of dense connected bipartite graphs via random matching edge sets
Kathleen E. Hamilton, Travis S. Humble
Using quantum annealing to solve an optimization problem requires minor embeddings of a logic graph into a known hardware graph. In an effort to reduce the complexity of the minor…
Ba8CoNb6O24: a spin-1/2 triangular-lattice Heisenberg antiferromagnet in the 2D limit
R. Rawl, L. Ge, H. Agrawal +11
The perovskite Ba8CoNb6O24 comprises equilateral effective spin-1/2 Co2+ triangular layers separated by six non-magnetic layers. Susceptibility, specific heat and neutron scatterin…
Ba2NiOsO6: A Dirac-Mott insulator with ferromagnetism near 100 K
Hai L. Feng, Stuart Calder, Madhav Prasad Ghimire +14
The ferromagnetic semiconductor Ba2NiOsO6 (Tmag ~100 K) was synthesized at 6 GPa and 1500 °C. It crystallizes into a double perovskite structure [Fm-3m; a = 8.0428(1) Å], where the…
Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures
John R. Schaibley, Pasqual Rivera, Hongyi Yu +7
Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In a…