58 citations
- Siemens (Austria)AT8 papers
- Graz University of TechnologyAT7 papers
- Infineon Technologies (Germany)DE7 papers
- TU WienAT6 papers
- Universität InnsbruckAT5 papers
- Alpine Quantum Technologies (Austria)AT3 papers
- ETH ZurichCH3 papers
- Institute for Quantum Optics and Quantum Information InnsbruckAT3 papers
- Johannes Gutenberg University MainzDE3 papers
- Johannes Kepler University of LinzAT3 papers
- Universität für Weiterbildung KremsAT3 papers
- University of ViennaAT3 papers
4 papers · 1 filter
Effect of Geometry on Sensitivity and Offset of AlGaN/GaN and InAlN/GaN Hall-effect Sensors
Hannah S. Alpert, Karen M. Dowling, Caitlin A. Chapin +5
The current- and voltage-scaled sensitivities and signal-to-noise ratios (SNR) (with respect to thermal noise) of various octagonal AlGaN/GaN and InAlN/GaN Hall-effect sensors were…
Mapping the depleted area of silicon diodes using a micro-focused X-ray beam
Luise Poley, Andrew Blue, Ingo Bloch +14
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silic…
Symmetries of certain double integrals related to Hall effect devices
Udo Ausserlechner. M. L. Glasser, Yajun Zhou
One encounters iterated elliptic integrals in the study of Hall effect devices, as a result of conformal mappings of Schwarz--Christoffel type. Some of these double elliptic integr…
Comparison of Sensitivity and Low Frequency Noise Contributions in GMR and TMR Spin Valve Sensors with a Vortex State Free Layer
Herbert Weitensfelder, Hubert Brueckl, Armin Satz +9
Magnetoresistive spin valve sensors based on the giant- (GMR) and tunnelling- (TMR) magnetoresisitve effect with a flux-closed vortex state free layer design are compared by means…