58 citations
- Siemens (Austria)AT8 papers
- Graz University of TechnologyAT7 papers
- Infineon Technologies (Germany)DE7 papers
- TU WienAT6 papers
- Universität InnsbruckAT5 papers
- Alpine Quantum Technologies (Austria)AT3 papers
- ETH ZurichCH3 papers
- Institute for Quantum Optics and Quantum Information InnsbruckAT3 papers
- Johannes Gutenberg University MainzDE3 papers
- Johannes Kepler University of LinzAT3 papers
- Universität für Weiterbildung KremsAT3 papers
- University of ViennaAT3 papers
6 papers · 1 filter
Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs
Maximilian W. Feil, Magdalena Weger, Hans Reisinger +10
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are g…
Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes
A. Nardo, C. De Santi, C. Koller +5
This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures.…
A Bidirectional Current-Mirror Based Potentiostat Using a Slice-Based Class-AB Amplifier
Markus Haberler, Inge Siegl, Christoph Steffan +1
A pico-ampere sensitive electrochemical sensor signal acquisition chain consisting of a multi-channel bidirectional current-mirror based potentiostat and a multiplexed current-inpu…
Drift of sensitive direction of Hall-effect devices in (100)-silicon caused by mechanical shear stress
Udo Ausserlechner, Michael Holliber, Benjamin Kollmitzer +1
The output signal of classical symmetrical Hall plates is an odd function of the magnetic field component acting perpendicular to the plate. At weak magnetic field the Hall plate o…
Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs
Martin Huber, Marco Silvestri, Lauri Knuuttila +5
Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. S…
Comparison of Sensitivity and Low Frequency Noise Contributions in GMR and TMR Spin Valve Sensors with a Vortex State Free Layer
Herbert Weitensfelder, Hubert Brueckl, Armin Satz +9
Magnetoresistive spin valve sensors based on the giant- (GMR) and tunnelling- (TMR) magnetoresisitve effect with a flux-closed vortex state free layer design are compared by means…