58 citations
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Showing cond-mat.mtrl-sciShow all
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cond-mat.mtrl-sci2020★ 1 cited
Decoupling of epitaxy related trapping effects in AlGaN/GaN metal-insulator semiconductor high electron mobility transistors
M. Huber, G. Pozzovivo, I. Daumiller +5
The decoupling of epitaxial factors influencing on the dynamic instabilities of AlGaN/GaN metal-insulator semiconductor high electron mobility transistors is investigated. Three di…
cond-mat.mtrl-sci2017★ 30 cited
Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO interface
Gernot Gruber, Jonathon Cottom, Robert Meszaros +5
SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects…
cond-mat.mtrl-sci2016
Diffusion of Hydrogen in Proton Implanted Silicon: Dependence on the Hydrogen Concentration
Martin Faccinelli, Stefan Kirnstoetter, Moriz Jelinek +4
The reported diffusion constants for hydrogen in silicon vary over six orders of magnitude. This spread in measured values is caused by the different concentrations of defects in t…