189 citations
- Infineon Technologies (Austria)AT8 papers
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physics.app-ph2021★ 30 cited
Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes
A. Nardo, C. De Santi, C. Koller +5
This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures.…
physics.app-ph2020★ 9 cited
Drift of sensitive direction of Hall-effect devices in (100)-silicon caused by mechanical shear stress
Udo Ausserlechner, Michael Holliber, Benjamin Kollmitzer +1
The output signal of classical symmetrical Hall plates is an odd function of the magnetic field component acting perpendicular to the plate. At weak magnetic field the Hall plate o…
physics.app-ph2020★ 43 cited
Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs
Martin Huber, Marco Silvestri, Lauri Knuuttila +5
Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. S…