most citedImpact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs

43 citations · 43 across the 1 of their papers we have counts for

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physics.app-ph2020★ 43 cited

Impact of Residual Carbon Impurities and Gallium Vacancies on Trapping Effects in AlGaN/GaN MIS-HEMTs

Martin Huber, Marco Silvestri, Lauri Knuuttila +5

Effects of residual C impurities and Ga vacancies on the dynamic instabilities of AlN/AlGaN/GaN metal insulator semiconductor high electron mobility transistors are investigated. S…