1.8k citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- University of Colorado BoulderUS112 papers
- Colorado School of MinesUS59 papers
- King's College LondonGB30 papers
- Lawrence Berkeley National LaboratoryUS28 papers
- Fudan UniversityCN17 papers
- Radboud University NijmegenNL15 papers
- Stanford UniversityUS15 papers
- University of MinnesotaUS15 papers
- University of California, BerkeleyUS14 papers
- Colorado State UniversityUS13 papers
- North Carolina State UniversityUS12 papers
- Princeton UniversityUS12 papers
8 papers · 1 filter
Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach
H. J. Xiang, Bing Huang, Erjun Kan +2
Diamond silicon (Si) is the leading material in current solar cell market. However, diamond Si is an indirect band gap semiconductor with a large energy difference (2.4 eV) between…
Using atomic layer deposition to hinder solvent decomposition in lithium ion batteries: first principles modeling and experimental studies
Kevin Leung, Yue Qi, Kevin R. Zavadil +5
Passivating lithium ion battery electrode surfaces to prevent electrolyte decomposition is critical for battery operations. Recent work on conformal atomic layer deposition (ALD) c…
In-Plane Orbital Texture Switch at the Dirac Point in the Topological Insulator Bi2Se3
Yue Cao, J. A. Waugh, X. -W. Zhang +13
Topological insulators are novel macroscopic quantum-mechanical phase of matter, which hold promise for realizing some of the most exotic particles in physics as well as applicatio…
Origin of the Superior Conductivity of Perovskite Ba(Sr)SnO3
Heng-Rui Liu, Ji-Hui Yang, H. J. Xiang +2
ASnO3 (A=Ba, Sr) are unique perovskite oxides in that they have superior electron conductivity despite their wide optical band gaps. Using first-principles band structure calculati…
First-principles study on the effective masses of zinc-blend-derived Cu_2Zn-IV-VI_4 (IV = Sn, Ge, Si and VI = S, Se)
Heng-Rui Liu, Shiyou Chen, Ying-Teng Zhai +3
The electron and hole effective masses of kesterite (KS) and stannite (ST) structured Cu_2Zn-IV-VI_4 (IV = Sn, Ge, Si and VI = S, Se) semiconductors are systematically studied usin…
Strong Dzyaloshinskii-Moriya Interaction and Origin of Ferroelectricity in Cu2OSeO3
J. H. Yang, Z. L. Li, X. Z. Lu +4
By performing density functional calculations, we investigate the origin of the skyrmion state and ferroelectricity in Cu2OSeO3. We find that the Dzyaloshinskii-Moriya interactions…
Si3AlP: A new promising material for solar cell absorber
Ji-Hui Yang, Yingteng Zhai, Hengrui Liu +3
First-principles calculations are performed to study the structural and optoelectronic properties of the newly synthesized nonisovalent and lattice-matched (Si2)0.6(AlP)0.4 alloy […
Room-Temperature Silicon Band-Edge Photoluminescence Enhanced by Spin-Coated Sol-Gel Films
Sufian Abedrabbo, Bashar Lahlouh, Sudhakar Shet +1
Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spi…