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19942026
most citedNew Tolerance Factor to Predict the Stability of Perovskite Oxides and Halides

1.8k citations

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5 papers · 1 filter

cond-mat2000★ 102 cited

Correlation versus mean-field contributions to excitons, multi-excitons, and charging energies in semiconductor quantum dots

J. Shumway, A. Franceschetti, Alex Zunger

Single-dot spectroscopy is now able to resolve the energies of excitons, multi-excitons, and charging of semiconductor quantum dots with ~<1 meV resolution. We discuss the physical…

cond-mat.mtrl-sci2000★ 122 cited

BAs and boride III-V alloys

Gus L. W. Hart, Alex Zunger

Boron arsenide, the typically-ignored member of the III-V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its Gamma conduction band minimum is p-lik…

cond-mat.mtrl-sci2000★ 444 cited

First principles elastic constants and electronic structure of alpha-Pt_2Si and PtSi

O. Beckstein, J. E. Klepeis, G. L. W. Hart +1

We have carried out a first principles study of the elastic properties and electronic structure for two room-temperature stable Pt silicide phases, tetragonal alpha-Pt_2Si and orth…

cond-mat.mtrl-sci2000★ 348 cited

Theoretical interpretation of the experimental electronic structure of lens shaped, self-assembled InAs/GaAs quantum dots

A. J. Williamson, L. W. Wang, Alex Zunger

We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the ``linear combination of bulk bands'' metho…

cond-mat.mtrl-sci2000★ 36 cited

Multi-excitons in self-assembled InAs/GaAs quantum dots: A pseudopotential, many-body approach

A. J. Williamson, A. Franceschetti, A. Zunger

We use a many-body, atomistic empirical pseudopotential approach to predict the multi-exciton emission spectrum of a lens shaped InAs/GaAs self-assembled quantum dot. We discuss th…