2.9k citations
Counting papers with at most 25 authors, so collaboration author lists do not stand in for the people here.
- Center for Integrated Quantum Science and TechnologyDE303 papers
- Centre National de la Recherche ScientifiqueFR82 papers
- Deutsches Zentrum für Luft- und Raumfahrt e. V. (DLR)DE71 papers
- Technische Hochschule UlmDE65 papers
- Helmholtz-Institute UlmDE64 papers
- Imperial College LondonGB58 papers
- Hebrew University of JerusalemIL52 papers
- Leibniz University HannoverDE51 papers
- University of StuttgartDE45 papers
- Texas A&M UniversityUS41 papers
- Universität InnsbruckAT40 papers
- Technical University of MunichDE37 papers
4 papers · 2 filters
A first-principles calculation of electron-phonon interactions for the and defects in hexagonal boron nitride
Kenneth Sharman, Omid Golami, Stephen Wein +4
Quantum emitters in two-dimensional hexagonal boron nitride (h-BN) have generated significant interest due to observations of ultra-bright emission made at room temperature. The ex…
Resta-like preconditioning for self-consistent field iterations in the linearized augmented planewave method
Jongmin Kim, Matthias M. May
Convergence in self-consistent-field cycles can be a major computational bottleneck of density-functional theory calculations. We propose a Resta-like preconditioning method for fu…
One pot chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides
Ziyang Gan, Ioannis Paradisanos, Ana Estrada-Real +13
We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to t…
Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
Dorian Beret, Ioannis Paradisanos, Ziyang Gan +17
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier…