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- Centre National de la Recherche ScientifiqueFR130 papers
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9 papers · 1 filter
Electric-Field-Induced Resistive Switching in a Family of Mott Insulators : towards Non-Volatile Mott-RRAM Memories
Laurent Cario, Cristian Vaju, Benoit Corraze +2
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical res…
Resistive switching induced by electronic avalanche breakdown in GaTaSeTe narrow gap Mott Insulators
Vincent Guiot, Laurent Cario, Etienne Janod +6
Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators,…
On spectral assignment for neutral type systems
Kateryna V. Sklyar, Rabah Rabah, Grigory M. Sklyar
For a large class of linear neutral type systems the problem of eigenvalues and eigenvectors assignment is investigated, i.e. finding the system which has the given spectrum and al…
Symplectic embeddings of polydisks
Richard Hind, Samuel Lisi
In this note, we obtain new obstructions to symplectic embeddings of a product of disks (a polydisk) into a 4-dimensional ball. The polydisk P(r,s) is the product of the disk of ar…
Pressure dependence of superconducting critical temperature and upper critical field of 2H-NbS2
V. G. Tissen, M. R. Osorio, J. P. Brison +6
We present measurements of the superconducting critical temperature Tc and upper critical field Hc2 as a function of pressure in the transition metal dichalcogenide 2H-NbS2 up to 2…
Ultrahigh Energy Neutrinos at the Pierre Auger Observatory
Pierre Auger Collaboration
The observation of ultrahigh energy (UHE) neutrinos has become a priority in experimental astroparticle physics. UHE neutrinos can be detected with a variety of techniques. In part…