284 citations
- Centre National de la Recherche ScientifiqueFR17 papers
- Western Digital (United States)US15 papers
- University of California San DiegoUS14 papers
- Institut Jean LamourFR10 papers
- New York UniversityUS10 papers
- University of California, IrvineUS10 papers
- Université de LorraineFR9 papers
- Cornell UniversityUS8 papers
- Stanford UniversityUS8 papers
- Hitachi (United Kingdom)GB7 papers
- Lawrence Berkeley National LaboratoryUS7 papers
- SLAC National Accelerator LaboratoryUS7 papers
8 papers · 1 filter
Parametric resonance of magnetization excited by electric field
Yu-Jin Chen, Han Kyu Lee, Roman Verba +6
Manipulation of magnetization by electric field is a central goal of spintronics because it enables energy-efficient operation of spin-based devices. Spin wave devices are promisin…
Optically Detected Ferromagnetic Resonance in Metallic Ferromagnets via Nitrogen Vacancy Centers in Diamond
Michael R. Page, Feng Guo, Carola M. Purser +7
We report quantitative measurements of optically detected ferromagnetic resonance (ODFMR) of ferromagnetic thin films that use nitrogen-vacancy (NV) centers in diamonds to transduc…
Template-Assisted Direct Growth of 1Td/in Bit Patterned Media
En Yang, Zuwei Liu, Hitesh Arora +8
We present a method for growing bit patterned magnetic recording media using directed growth of sputtered granular perpendicular magnetic recording media. The grain nucleation is t…
Accumulative magnetic switching of ultra-high-density recording media by circularly polarized light
Y. K. Takahashi, R. Medapalli, S. Kasai +6
Manipulation of the magnetization by external energies other than magnetic field, such as spin-polarized current1-4, electric voltage5,6 and circularly polarized light7-11 gives a…
Current-induced Pinwheel Oscillations in Perpendicular Magnetic Anisotropy Spin Valve Nanopillars
Richard Choi, J. A. Katine, Stephane Mangin +1
Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external…
Cotunneling drag effect in Coulomb-coupled quantum dots
A. J. Keller, J. S. Lim, David Sánchez +5
In Coulomb drag, a current flowing in one conductor can induce a voltage across an adjacent conductor via the Coulomb interaction. The mechanisms yielding drag effects are not alwa…