337 citations
- Pacific Northwest National LaboratoryUS46 papers
- University of WashingtonUS10 papers
- BattelleUS7 papers
- Lawrence Berkeley National LaboratoryUS6 papers
- Advanced Photon Source3 papers
- Argonne National LaboratoryUS3 papers
- John Wiley & Sons (United States)US3 papers
- Washington State University Tri-CitiesUS3 papers
- Diamond Light SourceGB2 papers
- Hebrew University of JerusalemIL2 papers
- Institute for Atomic and Molecular PhysicsNL2 papers
- Karlsruhe Institute of TechnologyDE2 papers
17 papers · 1 filter
Stacking Faults Assist Lithium-Ion Conduction in a Halide-Based Superionic Conductor
Elias Sebti, Hayden A. Evans, Hengning Chen +11
In the pursuit of urgently-needed, energy dense solid-state batteries for electric vehicle and portable electronics applications, halide solid electrolytes offer a promising path f…
An Automated Scanning Transmission Electron Microscope Guided by Sparse Data Analytics
Matthew Olszta, Derek Hopkins, Kevin R. Fiedler +3
Artificial intelligence (AI) promises to reshape scientific inquiry and enable breakthrough discoveries in areas such as energy storage, quantum computing, and biomedicine. Scannin…
Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole
M. Chrysler, J. Gabel, T. -L. Lee +14
We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be…
Asymmetric Lattice Disorder Induced at Oxide Interfaces
Steven R. Spurgeon, Tiffany C. Kaspar, Vaithiyalingam Shutthanandan +3
Control of order-disorder phase transitions is a fundamental materials science challenge, underpinning the development of energy storage technologies such as solid oxide fuel cells…
Hole-Induced Electronic and Optical Transitions in La1-xSrxFeO3 Epitaxial Thin Films
Le Wang, Yingge Du, Peter V. Sushko +6
We have investigated the electronic and optical properties of epitaxial La1-xSrxFeO3 for x from 0 to 1 prepared by molecular beam epitaxy. Core-level and valence-band x-ray photoem…
Layer-resolved band bending at the n-SrTiO3(001)/p-Ge(001) interface
Y. Du, P. V. Sushko, S. R. Spurgeon +6
The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,n-SrTiO3 and the high-mobility Group IV semiconductor p-Ge have…