output
20022019
most citedCreep and flow regimes of magnetic domain wall motion in ultrathin Pt/Co/Pt films with perpendicular anisotropy

626 citations

Showing 2015Show all

35 papers · 1 filter

cond-mat.mes-hall201545 cited

Antibunched photons from inelastic Cooper-pair tunneling

Juha Leppäkangas, Mikael Fogelström, Alexander Grimm +3

We demonstrate theoretically that charge transport across a Josephson junction, voltage-biased through a resistive environment, produces antibunched photons. We develop a continuou…

cond-mat.str-el20152 cited

Magnetic order, spin waves and fluctuations in the triangular antiferromagnet La2Ca2MnO7

P. Dalmas de Réotier, C. Marin, A. Yaouanc +4

We report magnetic susceptibility, specific heat and muon spin relaxation (muSR) experiments on the triangular antiferromagnet La2Ca2MnO7 which develops a genuine two-dimensional,…

cond-mat.mtrl-sci201522 cited

Topography of the graphene/Ir(111) moir{é} studied by surface x-ray diffraction

Fabien Jean, Tao Zhou, Nils Blanc +3

The structure of a graphene monolayer on Ir(111) has been investigated {\it in situ} in the growth chamber by surface x-ray diffraction including the specular rod, which allows dis…

cond-mat.mes-hall20152 cited

Direct probing of band-structure Berry phase in diluted magnetic semiconductors

M. Granada, D. Lucot, R. Giraud +4

We report on experimental evidence of the Berry phase accumulated by the charge carrier wave function in single-domain nanowires made from a (Ga,Mn)(As,P) diluted ferromagnetic sem…

cond-mat.mtrl-sci201537 cited

Valley polarization assisted spin polarization in two dimensions

V. T. Renard, B. A. Piot, X. Waintal +7

Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties thr…

cond-mat.mes-hall20153 cited

Non-Arrhenius conduction due to the interface-trap-induced disorder in X-doped amorphous InXZnO thin-film transistors

Mohammed Benwadih, J. A. Chroboczek, Gerard Ghibaudo +2

Thin film transistors, with channels composed of In-X-Zn oxides, IXZO, with X dopants: Ga, Sb, Be, Mg, Ag, Ca, Al, Ni, and Cu, were fabricated and their I-V characteristics were ta…