626 citations
- J. Flouquet2 profiles24 · h 57
- T. Rabilloud15 · h 55
- G. Lapertot2 profiles12 · h 37
- G. Knebel2 profiles9 · h 36
- L. Regnault3 profiles9 · h 44
- B. Dieny2 profiles8 · h 58
- M. Chevallet7 · h 29
- P. Lejay2 profiles7 · h 40
- S. Raymond7 · h 25
- B. Rodmacq6 · h 43
- E. Ressouche3 profiles6 · h 38
- P. Bayle-Guillemaud2 profiles6 · h 27
- Commissariat à l'Énergie Atomique et aux Énergies AlternativesFR213 papers
- Centre National de la Recherche ScientifiqueFR114 papers
- Université Joseph FourierFR63 papers
- Institut Nanosciences et CryogénieFR62 papers
- Université Grenoble AlpesFR34 papers
- Institut NéelFR30 papers
- Laboratoire d'Électronique des Technologies de l'InformationFR26 papers
- Institut polytechnique de GrenobleFR25 papers
- CEA Paris-SaclayFR14 papers
- Spintronique et Technologie des ComposantsFR13 papers
- Institut Laue-LangevinFR12 papers
- The University of OsakaJP11 papers
6 papers · 2 filters
Graphene: Piecing it together
Mark H. Rümmeli, Claudia G. Rocha, Frank Ortmann +11
Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, o…
Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO
Guillaume Perillat-Merceroz, Patrice Gergaud, Pascal Marotel +3
Although zinc oxide is a promising material for the fabrication of short wavelength optoelectronic devices, p-type doping is a step that remains challenging for the realization of…
MOCVD growth mechanisms of ZnO nanorods
Guillaume Perillat-Merceroz, Pierre-Henri Jouneau, Guy Feuillet +3
ZnO is a promising material for the fabrication of light emitting devices. One approach to achieve this goal is to use ZnO nanorods because of their expected high crystalline and o…
Wafer-scale selective area growth of GaN hexagonal prismatic nanostructures on c-sapphire substrate
Xiao Jun Chen, Jun-Seo Hwang, Guillaume Perillat-Merceroz +5
Selective area growth of GaN nanostructures has been performed on full 2" c-sapphire substrates using Si3N4 mask patterned by nanoimprint lithography (array of 400 nm diameter circ…
Exciton and interband optical transitions in hBN single crystal
Luc Museur, Gurvan Brasse, Aurélie Pierret +8
Near band gap photoluminescence (PL) of hBN single crystal has been studied at cryogenic temperatures with synchrotron radiation excitation. The PL signal is dominated by the D-ser…
Few Graphene layer/Carbon-Nanotube composite Grown at CMOS-compatible Temperature
V. Jousseaume, J. Cuzzocrea, N. Bernier +1
We investigate the growth of the recently demonstrated composite material composed of vertically aligned carbon nanotubes capped by few graphene layers. We show that the carbon nan…