626 citations
- J. Flouquet2 profiles30 · h 57
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Showing 2014 · cond-mat.mes-hallShow all
3 papers · 2 filters
cond-mat.mes-hall2014★ 30 cited
Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors
Mohammed Benwadih, J. A. Chroboczek, Gerard Ghibaudo +2
Alloying of In/Zn oxides with various X atoms stabilizes the IXZO structures but generates electron traps in the compounds, degrading the electron mobility. To assess whether the l…
cond-mat.mes-hall2014★ 2 cited
PtSi Clustering In Silicon Probed by Transport Spectroscopy
Massimo Mongillo, Panayotis Spathis, Georgios Katsaros +4
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces become…
cond-mat.mes-hall2014
Classical and quantum spreading of a charge pulse
Benoit Gaury, Joseph Weston, Christoph Groth +1
With the technical progress of radio-frequency setups, high frequency quantum transport experiments have moved from theory to the lab. So far the standard theoretical approach used…